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2N3500
Bipolar (BJT) Single Transistor, NPN, 150 V, 300 mA, 5 W, TO-39, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N3500
Order Code1862982
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max150V
Continuous Collector Current300mA
Power Dissipation5W
Transistor Case StyleTO-39
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency150MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N3500 is a 150V NPN silicon planar RF Transistor capable of 5W power dissipation and 300mA continuous collector current.
- 150V Collector to base voltage
- 6V Emitter to base voltage
- 35°C/W Thermal resistance, junction to case
Applications
RF Communications
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
300mA
Transistor Case Style
TO-39
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
150V
Power Dissipation
5W
Transistor Mounting
Through Hole
Transition Frequency
150MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001044