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No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBD677A
Order Code1653636
Technical Datasheet
Transistor PolarityNPN
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BD677A
2 Products Found
Product Overview
The BD677A is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Good hFE linearity
- High fT frequency
- Well-controlled hFE parameter for increased reliability
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Operating Temperature Max
150°C
Qualification
-
Transistor Mounting
Through Hole
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001329