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STD96N3LLH6
Power MOSFET, N Channel, 30 V, 80 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD96N3LLH6
Order Code3367029
Product RangeSTripFET VI DeepGATE
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | Rs.99.310 |
| 10+ | Rs.81.590 |
| 100+ | Rs.63.480 |
| 500+ | Rs.53.820 |
| 1000+ | Rs.49.260 |
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Rs.99.31
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD96N3LLH6
Order Code3367029
Product RangeSTripFET VI DeepGATE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0042ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET VI DeepGATE
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STD96N3LLH6 is a N-channel power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Applications include switching applications, automotive.
- Extremely low on-resistance RDS(on), high avalanche ruggedness
- Low gate drive power losses
- 30V minimum drain-source breakdown voltage (ID = 250µA, VGS= 0, TCASE = 25°C)
- 0.0042ohm maximum static drain-source on resistance (VGS = 10V, ID = 40A, TCASE = 25°C)
- 80A drain current (continuous) at TC = 25°C
- 1 to 2.5V gate threshold voltage range (VDS = VGS, ID = 250µA, TCASE = 25°C)
- 2200pF typical input capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 400pF typical output capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 280pF typical reverse transfer capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- DPAK package
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
STripFET VI DeepGATE
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033