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SISF02DN-T1-GE3
Dual MOSFET, N Channel, 25 V, 25 V, 60 A, 60 A, 2700 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISF02DN-T1-GE3
Order Code3128861RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 41 week(s)
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| Quantity | Price |
|---|---|
| 100+ | Rs.96.510 |
| 500+ | Rs.91.650 |
| 1000+ | Rs.74.650 |
| 5000+ | Rs.62.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.9,651.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISF02DN-T1-GE3
Order Code3128861RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)0.0027ohm
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel2700µohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel2700µohm
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max2.3V
No. of Pins8Pins
Power Dissipation Pd69.4W
Power Dissipation N Channel69.4W
Power Dissipation P Channel69.4W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0027ohm
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
2700µohm
Gate Source Threshold Voltage Max
2.3V
Power Dissipation Pd
69.4W
Power Dissipation P Channel
69.4W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
2700µohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109