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SQJB40EP-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 30 A, 30 A, 6300 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB40EP-T1_GE3
Order Code3470700RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
1,862 In Stock
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| Quantity | Price |
|---|---|
| 100+ | Rs.54.500 |
| 500+ | Rs.52.800 |
| 1000+ | Rs.51.100 |
| 5000+ | Rs.49.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Rs.5,450.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB40EP-T1_GE3
Order Code3470700RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id30A
Continuous Drain Current Id N Channel30A
On Resistance Rds(on)0.0063ohm
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel6300µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel6300µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd34W
No. of Pins8Pins
Power Dissipation N Channel34W
Power Dissipation P Channel34W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
30A
Continuous Drain Current Id P Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation P Channel
34W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0063ohm
Drain Source On State Resistance N Channel
6300µohm
Drain Source On State Resistance P Channel
6300µohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
34W
Power Dissipation N Channel
34W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001