Metal-insulator-metal (MIM) capacitors enable high capacitance with minimal space. Due to their high capacitance, voltage linearity, low leakage current, and ability to operate at high frequencies, metal-insulator-metal (MIM) capacitors are frequently employed in RF devices, DRAMs, and other electronic applications.
MIM capacitors, also known as parallel plate capacitors, are made of two metal sheets. Between the capacitor top metal (CTM) and capacitor bottom metal (CBM) layers, there is a thin insulating dielectric layer. Al, AlCu alloys, TiN, Ti, TaN, and Ta are all used to create these MIM layers.
KYOCERA AVX Thin Film Technologies has introduced a novel MIM (Metal-Insulator-Metal) capacitor using a transmission line wire bond pad structure with backside ground. The transmission line MIM can be supplied on quartz, alumina, glass and other substrates to minimise losses. Copper traces are used for optimal conductivity. Front and backside gold metallization make this device suitable for epoxy, gold wire bond/ribbon bond attachments.
Features and benefits- HFSS design unique for every device
- Gold wire bondable
- Copper conductor design for improved circuit conductivity
- Designs optimized for rf/performance
- RoHS compliant
Typical uses include DC blocking at UHF, high frequency link, and RF/Microwave applications
