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IXFP4N100Q
Power MOSFET, N Channel, 1 kV, 4 A, 3 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFP4N100QCopy
Order Code1427335
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id4A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation156W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXFP4N100Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- Low QG
- Low RDS (ON)
- Low drain-to-tab capacitance
- Low package inductance
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Industrial, Lighting, Thermal Management
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
4A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004