Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTH4L028N170M1.	4070487 Data Sheet RoHS	ONSEMI MOSFET N-CH 1.7KV 81A TO-247	Each	1+Rs.3,704.790 5+Rs.3,523.310 10+Rs.3,341.830 50+Rs.3,160.350 100+Rs.2,982.860	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	TUK SGACK902S Keystone Coupler
NTH4L028N170M1	4079791 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 81 A 1.7 kV 0.028 ohm TO-247	Each	1+Rs.3,692.530 5+Rs.3,212.080 10+Rs.2,731.620 50+Rs.2,676.990 100+Rs.2,622.360	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	EliteSiC Series
NTBG028N170M1	4079788 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 71 A 1.7 kV 0.028 ohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+Rs.3,817.040 5+Rs.3,458.720 10+Rs.3,100.400 50+Rs.3,034.820 100+Rs.2,969.240	Single	N Channel	71A	1.7kV	0.028ohm	TO-263 (D2PAK)	7Pins	20V	4.3V	428W	175°C	EliteSiC Series
SCT020HU120G3AG	4632678 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET AEC-Q101 Single N Channel 100 A 1.2 kV 0.028 ohm HU3PAK	Each (Supplied on Cut Tape) Cut Tape	1+Rs.2,211.260 5+Rs.1,932.160 10+Rs.1,653.060 50+Rs.1,524.660 100+Rs.1,396.260 More Pricing...	Single	N Channel	100A	1.2kV	0.028ohm	HU3PAK	7Pins	18V	4.2V	555W	175°C	-