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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=1960µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+Rs.34,389.260 5+Rs.33,963.720 | Half Bridge | Dual N Channel | 350A | 1.2kV | 1960µohm | Module | 7Pins | 18V | 5.15V | 175°C | 62mm C Series | ||||||
Each | 1+Rs.32,327.280 5+Rs.32,200.040 | Half Bridge | Dual N Channel | 290A | 1.2kV | 1960µohm | Module | 7Pins | 18V | 5.15V | 175°C | 62mm C Series | ||||||
