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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+Rs.2,151.270 5+Rs.1,744.480 10+Rs.1,357.800 | Single | N Channel | 34A | 1.2kV | 66mohm | TO-247 | 3Pins | 12V | -4.7V | 254W | 175°C | - | ||||||
Each | 1+Rs.6,810.390 5+Rs.6,046.090 10+Rs.5,314.750 50+Rs.5,022.430 | Single | N Channel | 120A | 1.2kV | 7100µohm | TO-247 | 4Pins | 2V | -4.7V | 789W | 175°C | EliteSiC Series | ||||||
