Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NXH011T120M3F2PTHG	4317992 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge N Channel 91 A 1.2 kV 0.016 ohm Module	Each	1+Rs.11,318.660 5+Rs.10,949.890 10+Rs.10,581.110 50+Rs.10,369.490	Half Bridge	N Channel	91A	1.2kV	0.016ohm	Module	29Pins	18V	4.4V	272W	150°C	-
F3L8MXTR12C2M2H11BPSA1	4759600 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Three Level Quad N Channel 95 A 1.2 kV 8300 µohm Module	Each	1+Rs.16,159.160 5+Rs.15,615.810 10+Rs.15,072.460	Three Level	Quad N Channel	95A	1.2kV	8300µohm	Module	29Pins	18V	5.15V	-	175°C	EasyPACK Series
F3L8MXTR12C2M2QH11BPSA1	4759603 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Three Level Quad N Channel 95 A 1.2 kV 8300 µohm Module	Each	1+Rs.20,006.880 5+Rs.18,006.190 10+Rs.16,939.150	Three Level	Quad N Channel	95A	1.2kV	8300µohm	Module	29Pins	18V	5.15V	-	175°C	EasyPACK Series
NXH008T120M3F2PTHG	4317991 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge N Channel 129 A 1.2 kV 0.0115 ohm Module	Each	1+Rs.14,821.560 5+Rs.14,521.220 10+Rs.14,220.880	Half Bridge	N Channel	129A	1.2kV	0.0115ohm	Module	29Pins	18V	4.4V	371W	150°C	-