Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTBG080N120SC1	3528496 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 30 A 1.2 kV 0.08 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+Rs.1,273.800 5+Rs.1,025.260 10+Rs.776.710 50+Rs.761.180 100+Rs.745.650 More Pricing...	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
NVBG080N120SC1	3528514 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 30 A 1.2 kV 0.08 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+Rs.1,180.450 5+Rs.1,132.870 10+Rs.1,085.290 50+Rs.1,037.700 100+Rs.990.120 More Pricing...	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
NVBG080N120SC1	4382111 Data Sheet RoHS	ONSEMI SIC MOSFET N-CH 1.2KV 30A TO-263HV-7	Each	1+Rs.2,599.730 5+Rs.2,339.760 10+Rs.2,201.110 50+Rs.2,045.120 100+Rs.1,906.470 More Pricing...	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
LSIC1MO120E0080	3361191 Data Sheet RoHS	LITTELFUSE Silicon Carbide MOSFET Single N Channel 39 A 1.2 kV 0.08 ohm TO-247	Each	1+Rs.2,642.540 5+Rs.2,380.360 10+Rs.2,118.170 50+Rs.1,975.500 100+Rs.1,832.820 More Pricing...	Single	N Channel	39A	1.2kV	0.08ohm	TO-247	3Pins	20V	2.8V	179W	150°C	-