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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+Rs.2,176.160 25+Rs.2,131.500 100+Rs.2,023.140 | Single | N Channel | 66A | 1.2kV | 0.04ohm | TO-247 | 3Pins | 20V | 2.7V | 323W | 175°C | ||||||
Each | 1+Rs.1,536.750 25+Rs.1,437.430 100+Rs.1,338.100 | Single | N Channel | 66A | 1.2kV | 0.04ohm | TO-247 | 4Pins | 20V | 2.6V | 323W | 175°C | ||||||
