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DMC2400UV-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.03 A, 1.03 A, 0.3 ohm
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| Quantity | Price |
|---|---|
| 500+ | Rs.6.950 |
| 1500+ | Rs.6.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
Rs.3,475.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2400UV-7
Order Code2543523RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.03A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.3ohm
Continuous Drain Current Id N Channel1.03A
Continuous Drain Current Id P Channel1.03A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.3ohm
Rds(on) Test Voltage5V
Drain Source On State Resistance P Channel0.3ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd450mW
Power Dissipation N Channel450mW
Power Dissipation P Channel450mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include power management functions, battery operated systems and solid-state relays and load switch.
- Drain-source voltage is 20V, gate-source voltage is ±12V
- Pulsed drain current is 3A, maximum body diode continuous current is 800mA
- Low on-resistance
- Low gate threshold voltage VGS(TH) <lt/>1V
- Low input capacitance
- Fast switching speed, low input/output leakage
- Total power dissipation is 0.45W
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.03A
On Resistance Rds(on)
0.3ohm
Continuous Drain Current Id P Channel
1.03A
Drain Source On State Resistance N Channel
0.3ohm
Drain Source On State Resistance P Channel
0.3ohm
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
450mW
Power Dissipation P Channel
450mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.03A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation N Channel
450mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145