AS4C256M16D3C-12BIN

AS4C256M16D3C-12BIN is a 256M x 16bit DDR3 synchronous DRAM (SDRAM). The 4Gb double-data-rate-3 DRAM is a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organized as 32Mbit x 16I/Os x 8 bank devices. This synchronous device achieves high-speed double-data-rate transfer rates of up to 2133Mb/sec/pin for general applications. The chip is designed to comply with all DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source-synchronous fashion.

• JEDEC standard compliant, supports JEDEC clock jitter specification
• Fully synchronous operation, differential clock, CK and CK#
• Bidirectional differential data strobe, DQS and DQS#
• 8 internal banks for concurrent operation, 8n-bit prefetch architecture
• Pipelined internal architecture, precharge and active power down
• Programmable mode and extended mode registers, additive latency (AL): 0, CL-1, CL-2
• Programmable Burst lengths: 4, 8, burst type: sequential / interleave
• Output driver impedance control, write levelling, ZQ calibration, auto refresh and self refresh
• Dynamic ODT (Rtt-Nom and Rtt-WR), 800MHz maximum clock
• 96-ball FBGA package, industrial temperature range from -40°C to 95°C