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MJ11012
DARLINGTON TRANSISTOR, NPN, 60V, TO-3
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSOLID STATE
Manufacturer Part NoMJ11012Copy
Order Code1713168
Technical Datasheet
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Power Dissipation Pd200W
Continuous Collector Current30A
DC Collector Current30A
Power Dissipation200W
Transistor Case StyleTO-3
RF Transistor CaseTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
DC Current Gain hFE200hFE
Transition Frequency-
DC Current Gain hFE Min1000hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Technical Specifications
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
200W
DC Collector Current
30A
Transistor Case Style
TO-3
Transistor Mounting
Through Hole
DC Current Gain hFE
200hFE
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Continuous Collector Current
30A
Power Dissipation
200W
RF Transistor Case
TO-3
No. of Pins
2Pins
Transition Frequency
-
Operating Temperature Max
200°C
Qualification
-
SVHC
To Be Advised
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012247