Print Page
DMT10H009SK3-13
Power MOSFET, N Channel, 100 V, 91 A, 6900 µohm, TO-252, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H009SK3-13Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3405206RL
Cut Tape3405206
Your Part Number
1,135 In Stock
5,000 more incoming. You can reserve stock now
1,135 Delivery in 4-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Rs.242.530 | Rs.242.53 |
| Total Price | Rs.242.53 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Rs.242.530 |
| 10+ | Rs.151.680 |
| 100+ | Rs.100.540 |
| 500+ | Rs.79.820 |
| 1000+ | Rs.65.020 |
| 5000+ | Rs.63.720 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT10H009SK3-13Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3405206RL
Cut Tape3405206
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id91A
Drain Source On State Resistance6900µohm
Transistor Case StyleTO-252
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
DMT10H009SK3-13 is a 100V N-channel enhancement mode MOSFET in a TO252 package. It features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Typical applications include power management functions, DC-DC converters, and backlighting.
- ±20V gate-source voltage
- 9.1mohm at VGS = 10V maximum RDS(on)
- 91A Id maximum Tc=+25°C
- Low RDS(ON) – minimizes power losses
- Low Qg –minimizes switching losses
- Pulsed drain current (10µs pulse, duty cycle = 1%)
- Operating temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
91A
Transistor Case Style
TO-252
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002