Print Page
F411MR12W3M1HB11BPSA1
Silicon Carbide MOSFET, FourPack, N Channel, 75 A, 1.2 kV, 0.016 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoF411MR12W3M1HB11BPSA1
Order Code4694659
Product RangeEasyPACK Series
Also Known AsF4-11MR12W3M1H_B11, SP006060405
Technical Datasheet
12 In Stock
Need more?
12 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.16,098.180 |
| 5+ | Rs.13,726.560 |
| 10+ | Rs.13,452.030 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.16,098.18
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoF411MR12W3M1HB11BPSA1
Order Code4694659
Product RangeEasyPACK Series
Also Known AsF4-11MR12W3M1H_B11, SP006060405
Technical Datasheet
MOSFET Module ConfigurationFourPack
Channel TypeN Channel
Continuous Drain Current Id75A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.016ohm
Transistor Case StyleModule
No. of Pins50Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeEasyPACK Series
SVHCNo SVHC (21-Jan-2025)
Product Overview
F411MR12W3M1HB11BPSA1 is an EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC. Potential applications include EV charging, energy storage systems (ESS), solar applications, and DC/DC converters.
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
- Overload operation up to 175°C
- Integrated NTC temperature sensor, PressFIT contact technology
- Drain-source voltage is 1200V at Tvj = 25°C
- Continuous DC drain current is 75A at Tvj = 175°C, VGS = 18V, TH = 95°C
- Repetitive peak drain current is 150A ( verified by design, tp limited by Tvjmax)
- Drain-source on-resistance is 10.8mohm typ at VGS = 18V, Tvj = 25°C, ID = 75A
- Total gate charge is 0.223µC typ at VDD = 800V, VGS = -3/18V, Tvj = 25°C
- Drain-source leakage current is 0.045µA typ at VDS = 1200V, VGS = -3V, Tvj = 25°C
- Storage temperature range from -40 to 125°C
Technical Specifications
MOSFET Module Configuration
FourPack
Continuous Drain Current Id
75A
Drain Source On State Resistance
0.016ohm
No. of Pins
50Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
EasyPACK Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001