IDM10G120C5XTMA1
Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 38 A, 41 nC, TO-252 (DPAK)
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Rs.526.230 | Rs.526.23 |
| Total Price | Rs.526.23 | ||
| Quantity | Price |
|---|---|
| 1+ | Rs.526.230 |
| 10+ | Rs.331.800 |
| 100+ | Rs.249.050 |
| 500+ | Rs.218.140 |
| 1000+ | Rs.203.190 |
Product Information
Product Overview
5th Generation thinQ!™ 1200V SiC Schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are System efficiency improvement over Si diodes, system cost / size savings due to reduced cooling requirements, enabling higher frequency / increased power density solutions, higher system reliability due to lower operating temperatures and reduced EMI.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
thinQ 5G 1200V
1.2kV
41nC
2 Pin
Surface Mount
No SVHC (25-Jun-2025)
Single
38A
TO-252 (DPAK)
175°C
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate