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IGB110S101XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, VSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGB110S101XTMA1
Order Code4667115
Product RangeCoolGaN G3 Series
Also Known AsIGB110S101, SP005751574
Technical Datasheet
4,918 In Stock
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4918 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.175.610 |
| 10+ | Rs.133.800 |
| 100+ | Rs.106.950 |
| 500+ | Rs.93.560 |
| 1000+ | Rs.82.680 |
| 5000+ | Rs.77.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.175.61
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGB110S101XTMA1
Order Code4667115
Product RangeCoolGaN G3 Series
Also Known AsIGB110S101, SP005751574
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id23A
Drain Source On State Resistance0.011ohm
Typical Gate Charge3.4nC
Transistor Case StyleVSON
Transistor MountingSurface Mount
No. of Pins4Pins
Product RangeCoolGaN G3 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.011ohm
Transistor Case Style
VSON
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
23A
Typical Gate Charge
3.4nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN G3 Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001