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IPB80N04S2H4ATMA2
Power MOSFET, N Channel, 40 V, 80 A, 3200 µohm, TO-263 (D2PAK), Surface Mount
1,519 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.245.680 |
| 10+ | Rs.190.960 |
| 100+ | Rs.156.340 |
| 500+ | Rs.140.710 |
| 1000+ | Rs.139.590 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.245.68
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80N04S2H4ATMA2
Order Code3703574
Product RangeOptiMOS
Also Known AsIPB80N04S2-H4, SP001058130
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id80A
Drain Source On State Resistance3200µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
3200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002