Print Page
IPP120N20NFDAKSA1
Power MOSFET, N Channel, 200 V, 84 A, 0.012 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP120N20NFDAKSA1
Order Code2480855
Also Known AsIPP120N20NFD, SP001108122
Technical Datasheet
992 In Stock
Need more?
992 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.386.650 |
| 10+ | Rs.306.610 |
| 100+ | Rs.306.540 |
| 500+ | Rs.306.470 |
| 1000+ | Rs.306.400 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.386.65
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP120N20NFDAKSA1
Order Code2480855
Also Known AsIPP120N20NFD, SP001108122
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id84A
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPP120N20NFD is a N-channel Power MOSFET with improved hard commutation ruggedness. This new OptiMOS™ fast diode (FD), Infineon's latest generation of power MOSFET is optimized for body diode hard commutation. It is the perfect choice for hard switching applications.
- Industry's lowest RDS (ON), Qg and Qrr
- Halogen-free, Green device
- Highest system reliability
- Highest efficiency and power density
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target application
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
84A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002008