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IPTG111N20NM3FDATMA1
Power MOSFET, N Channel, 200 V, 108 A, 0.009 ohm, HSOG, Surface Mount
3,335 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.613.770 |
| 5+ | Rs.566.690 |
| 10+ | Rs.519.610 |
| 50+ | Rs.479.310 |
| 100+ | Rs.439.020 |
| 250+ | Rs.430.250 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.613.77
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPTG111N20NM3FDATMA1
Order Code3779672
Product RangeOptiMOS 3
Also Known AsSP005431194, IPTG111N20NM3FD
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id108A
Drain Source On State Resistance0.009ohm
Transistor Case StyleHSOG
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
108A
Transistor Case Style
HSOG
Rds(on) Test Voltage
10V
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536