Print Page
IRF6645TRPBF
Power MOSFET, N Channel, 100 V, 25 A, 0.035 ohm, DirectFET SJ, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF6645TRPBF
Order Code2725892
Product RangeHEXFET Series
Also Known AsSP001562050
Technical Datasheet
7,155 In Stock
Need more?
7155 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.110.660 |
| 10+ | Rs.85.660 |
| 100+ | Rs.69.080 |
| 500+ | Rs.52.490 |
| 1000+ | Rs.47.510 |
| 5000+ | Rs.45.890 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.110.66
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6645TRPBF
Order Code2725892
Product RangeHEXFET Series
Also Known AsSP001562050
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id25A
Drain Source On State Resistance0.035ohm
Transistor Case StyleDirectFET SJ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.9V
Power Dissipation42W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel strongIRFET™ power MOSFET in a DirectFET™ SJ package suitable for use in power supplies and isolated DC-DC converters.
- Optimized for synchronous rectification
- Application specific MOSFET
- Product qualification according to JEDEC standard
- High-current rating
- Dual-side cooling capability
- High power density
- Optimum thermal performance
- Compact form factor
- High efficiency
- Environmentally friendly
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
25A
Transistor Case Style
DirectFET SJ
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.9V
No. of Pins
7Pins
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121