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IRFR9024NTRPBF
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFR9024NTRPBFCopy
Manufacturer Standard Lead Time19 weeks
Order Code
Re-Reel2468042RL
Cut Tape2468042
Also Known AsSP001557190
Your Part Number
7,265 In Stock
Need more?
7,265 Delivery in 4-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Rs.138.900 | Rs.138.90 |
| Total Price | Rs.138.90 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Rs.138.900 |
| 10+ | Rs.86.430 |
| 100+ | Rs.56.400 |
| 500+ | Rs.43.480 |
| 1000+ | Rs.33.490 |
| 5000+ | Rs.32.830 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR9024NTRPBFCopy
Manufacturer Standard Lead Time19 weeks
Order Code
Re-Reel2468042RL
Cut Tape2468042
Also Known AsSP001557190
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id11A
Drain Source On State Resistance0.175ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Automotive, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.175ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000593