Print Page
IXDR30N120
IGBT, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXDR30N120
Order Code1300074
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.4V
Power Dissipation200W
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
200W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
2.4V
Transistor Case Style
TO-247AD
Operating Temperature Max
150°C
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005