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IXFH12N100P
Power MOSFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH12N100P
Order Code3438377
Product RangePolar HiPerFET
Technical Datasheet
582 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.757.420 |
| 5+ | Rs.655.110 |
| 10+ | Rs.552.790 |
| 50+ | Rs.534.190 |
| 100+ | Rs.515.590 |
| 250+ | Rs.497.640 |
Price for:Each
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Multiple: 1
Rs.757.42
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH12N100P
Order Code3438377
Product RangePolar HiPerFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id12A
Drain Source On State Resistance1.05ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation436W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangePolar HiPerFET
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
436W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
1.05ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6.5V
No. of Pins
3Pins
Product Range
Polar HiPerFET
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004