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IXFN210N20P
MOSFET Transistor, N Channel, 188 A, 200 V, 0.00105 ohm, 10 V, 4.5 V
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| Quantity | Price |
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| 1+ | Rs.3,751.770 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N20P
Order Code3930242
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id188A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.00105ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation1.07kW
Operating Temperature Max175°C
Product Range-
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC and DC motor drives, uninterruptible power supplies, high speed power switching applications.
- miniBLOC with aluminium nitride isolation
- Low RDS(ON) and QG
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Power Dissipation
1.07kW
Product Range
-
Continuous Drain Current Id
188A
Drain Source On State Resistance
0.00105ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
175°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001