DN3535N8-G
Power MOSFET, N Channel, 350 V, 230 mA, 10 ohm, SOT-89, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | Rs.84.620 |
| 25+ | Rs.71.500 |
| 100+ | Rs.64.930 |
Product Information
Product Overview
The DN3535N8-G is a N-channel depletion-mode vertical DMOS FET utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS device. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed is desired.
- Low ON-resistance
- Free from secondary breakdown
- Low input and output leakages
Applications
Power Management, Communications & Networking
Technical Specifications
N Channel
230mA
SOT-89
0V
1.6W
150°C
-
No SVHC (21-Jan-2025)
350V
10ohm
Surface Mount
-
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate