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NGW30T65M3DFPQ
IGBT, 57 A, 1.5 V, 199 W, 650 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNGW30T65M3DFPQCopy
Manufacturer Standard Lead Time18 weeks
Order Code
Re-Reel4697667RL
Cut Tape4697667
Your Part Number
430 In Stock
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430 Delivery in 4-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Rs.412.030 | Rs.412.03 |
| Total Price | Rs.412.03 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Rs.412.030 |
| 10+ | Rs.270.730 |
| 100+ | Rs.214.210 |
| 500+ | Rs.157.690 |
| 1000+ | Rs.147.530 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGW30T65M3DFPQCopy
Manufacturer Standard Lead Time18 weeks
Order Code
Re-Reel4697667RL
Cut Tape4697667
Technical Datasheet
Continuous Collector Current57A
Collector Emitter Saturation Voltage1.5V
Power Dissipation199W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCLead (25-Jun-2025)
Product Overview
NGW30T65M3DFPQ is a 650V, 30A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175°C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5μs. This hard-switching 650V, 50A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and soft fast reverse recovery diode
- HV-H3TRB qualified
Technical Specifications
Continuous Collector Current
57A
Power Dissipation
199W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001