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BD137G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 1.5 A, 65 W, TO-225AA, Through Hole
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2,566 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.43.590 |
| 10+ | Rs.43.140 |
| 100+ | Rs.36.230 |
| 500+ | Rs.27.620 |
| 1000+ | Rs.25.500 |
| 5000+ | Rs.23.980 |
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Multiple: 1
Rs.43.59
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD137G
Order Code1653612
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current1.5A
Power Dissipation65W
Transistor Case StyleTO-225AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BD137G is a 60V NPN bipolar medium-power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
- Complementary with BD138
Applications
Industrial, Power Management, Audio
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-225AA
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
65W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454