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ManufacturerONSEMI
Manufacturer Part NoFDD9409-F085
Order Code3003936
Product RangePowerTrench
Technical Datasheet
2,228 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.110.700 |
| 10+ | Rs.90.340 |
| 100+ | Rs.86.990 |
| 500+ | Rs.83.650 |
| 2500+ | Rs.82.660 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
Rs.110.70
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD9409-F085
Order Code3003936
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id90A
Drain Source On State Resistance2300µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.2V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePowerTrench
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
FDD9409-F085 is a N-channel PowerTrench® MOSFET. Application includes automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, distributed Power Architectures and VRM, primary switch for 12V systems.
- Drain-to-source on resistance is 2.3mohm(typ, TJ = 25°C, ID = 80A, VGS= 10V)
- 42nC typical total gate charge at 10V (VGS = 0 to 10V, VDD = 20V, ID = 80A)
- 40V minimum drain-to-source breakdown voltage (ID = 250μA, VGS = 0V)
- 1μA maximum drain-to-source leakage current (TJ = 25°C, VDS = 40V, VGS = 0V)
- Gate-to-source leakage current is ±100nA (maximum, VGS = ±20V)
- Input capacitance is 3130pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
- Output capacitance is 756pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
- Gate resistance is 2ohm (f = 1MHz, TJ = 25°C)
- Source-to-drain diode voltage is 1.25V (max, ISD = 80A, VGS = 0V)
- D-PAK(TO-252) package, operating and storage temperature range from -55 to + 175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.2V
No. of Pins
3Pins
Product Range
PowerTrench
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005