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MJD45H11-1G
Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-251, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | Rs.88.710 |
| 10+ | Rs.39.250 |
| 100+ | Rs.39.010 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.88.71
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD45H11-1G
Order Code2727981
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current8A
Power Dissipation20W
Transistor Case StyleTO-251
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency90MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
8A
Transistor Case Style
TO-251
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
20W
Transistor Mounting
Through Hole
Transition Frequency
90MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000844