Print Page
NDS0610
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS0610Copy
Manufacturer Standard Lead Time22 weeks
Order Code
Full Reel2438361
Re-Reel9846360RL
Cut Tape9846360
Your Part Number
38,922 In Stock
Need more?
8,111 Delivery in 3-5 Business Days(SG stock)
30,811 Delivery in 4-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Rs.56.690 | Rs.283.45 |
| Total Price | Rs.283.45 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Rs.56.690 |
| 50+ | Rs.46.290 |
| 100+ | Rs.35.880 |
| 500+ | Rs.16.390 |
| 1500+ | Rs.16.070 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | Rs.12.840 |
| 9000+ | Rs.11.180 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS0610Copy
Manufacturer Standard Lead Time22 weeks
Order Code
Full Reel2438361
Re-Reel9846360RL
Cut Tape9846360
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id120mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
120mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NDS0610
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033