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Quantity | Price |
---|---|
1+ | Rs.193.820 |
10+ | Rs.118.390 |
100+ | Rs.103.300 |
500+ | Rs.87.620 |
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Multiple: 1
Rs.193.82
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFJP13009H2TU
Order Code1700664
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current12A
Power Dissipation100W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
- High voltage capability
- High switching speed
- 700V Collector-base voltage
- 9V Emitter-base voltage
- 6A Base current
Applications
Lighting, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
12A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
8hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
100W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00204