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NGTB40N120S3WG
IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 Pins
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93 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.551.820 |
| 10+ | Rs.437.850 |
| 100+ | Rs.353.460 |
| 500+ | Rs.332.580 |
| 1000+ | Rs.295.170 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.551.82
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB40N120S3WG
Order Code2723793
Technical Datasheet
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Product Range-
Product Overview
The NGTB40N120S3WG features a robust and cost effective Ultra Field Stop trench construction that provides superior performance in demanding switching applications, offering low switching losses. This IGBT is well suited to applications requiring fast switching with low forward voltage diodes, such as phase-shifted full bridge configurations. Built in free wheeling diode with a low forward voiltage.
- Extremely efficient trench with Field Stop Technology
- 175°C max operating temperature
- Optimised for high speed siwtching
- Low forward voltage reverse diode
Applications
Power Supplies, Motor Drive & Control
Technical Specifications
Transistor Case Style
TO-247
Product Range
-
Transistor Mounting
Through Hole
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002