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NVH4L032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 50 A, 650 V, 0.044 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNVH4L032N065M3S
Order Code4583077
Product RangeEliteSiC Series
Technical Datasheet
354 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.1,035.850 |
| 5+ | Rs.972.620 |
| 10+ | Rs.909.390 |
| 50+ | Rs.847.820 |
| 100+ | Rs.786.240 |
| 250+ | Rs.761.450 |
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Multiple: 1
Rs.1,035.85
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L032N065M3S
Order Code4583077
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id50A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.044ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation187W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Product Overview
NVH4L032N065M3S is an EliteSiC 650V M3S MOSFET that uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 50A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 114pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.044ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
187W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001