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RTP100E2P6G1FL-TR
Gallium Nitride (GaN) Transistor, 100 V, 113 A, 0.0026 ohm, 9.4 nC, FCLGA, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | Rs.365.540 |
| 10+ | Rs.197.340 |
| 100+ | Rs.181.140 |
| 500+ | Rs.174.890 |
| 1000+ | Rs.171.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.365.54
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerRENESAS
Manufacturer Part NoRTP100E2P6G1FL-TRCopy
Order Code5128703
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id113A
Drain Source On State Resistance0.0026ohm
Typical Gate Charge9.4nC
Transistor Case StyleFCLGA
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0026ohm
Transistor Case Style
FCLGA
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
113A
Typical Gate Charge
9.4nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001