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Manufacturer Standard Lead Time: 23 week(s)
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Quantity | Price |
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1+ | Rs.43,983.880 |
5+ | Rs.40,961.310 |
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM120D12P2C005
Order Code2345472
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins10Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max2.7V
Power Dissipation780W
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
Product Overview
The BSM120D12P2C005 is a N-channel SiC Power Module designed for use with inverter, converter, photovoltaic, wind power generation and induction heating equipment applications. The device offers low surge, low switching loss and high-speed switching possible, reduced temperature dependence.
Applications
Industrial, Motor Drive & Control, Alternative Energy, Power Management, Medical
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
120A
Drain Source On State Resistance
-
No. of Pins
10Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
780W
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.279413