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2N6661
Power MOSFET, MOSPOWER, N Channel, 90 V, 900 mA, 4 ohm, TO-205AF, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N6661
Order Code2630600
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds90V
Continuous Drain Current Id900mA
Drain Source On State Resistance4ohm
Transistor Case StyleTO-205AF
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Alternatives for 2N6661
1 Product Found
Product Overview
The 2N6661 is a 90V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
900mA
Transistor Case Style
TO-205AF
Rds(on) Test Voltage
10V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
90V
Drain Source On State Resistance
4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814