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SCT018HU65G3AG
Silicon Carbide MOSFET, Single, N Channel, 60 A, 650 V, 0.029 ohm, HU3PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT018HU65G3AG
Order Code4740489
Technical Datasheet
100 In Stock
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100 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.1,267.050 |
| 5+ | Rs.1,178.350 |
| 10+ | Rs.1,125.700 |
| 50+ | Rs.1,081.950 |
| 100+ | Rs.1,040.020 |
| 250+ | Rs.1,020.640 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.1,267.05
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT018HU65G3AG
Order Code4740489
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.029ohm
Transistor Case StyleHU3PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation388W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.029ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HU3PAK
Rds(on) Test Voltage
18V
Power Dissipation
388W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001