Print Page
STP6NK90Z
Power MOSFET, N Channel, 900 V, 5.8 A, 2 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
2,861 In Stock
Need more?
2861 Delivery in 4-6 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Rs.317.150 |
| 10+ | Rs.144.110 |
| 100+ | Rs.143.220 |
| 500+ | Rs.136.120 |
| 1000+ | Rs.131.690 |
| 5000+ | Rs.129.060 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.317.15
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP6NK90Z
Order Code9803297
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id5.8A
Drain Source On State Resistance2ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85389000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002