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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFB20N50KPBF.Copy
Order Code8657920
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id20A
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRFB20N50KPBF.
1 Product Found
Product Overview
The IRFB20N50KPBF is an N-channel Power MOSFET features low gate charge Qg results in simple drive requirement, improved gate avalanche and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche voltage and current. It is applicable for hard switched and high frequency circuits.
- Low RDS (ON)
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
