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BPW17N
Phototransistor, 825 nm, 12 °, 100 mW, 2 Pins, T-3/4 (1.8mm)
Image is for illustrative purposes only. Please refer to product description.
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| Quantity | Price |
|---|---|
| 1+ | Rs.74.550 |
| 10+ | Rs.46.240 |
| 25+ | Rs.42.990 |
| 50+ | Rs.39.740 |
| 100+ | Rs.36.480 |
| 500+ | Rs.30.800 |
Price for:Each
Minimum: 1
Multiple: 1
Rs.74.55
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
- Leaded silicon NPN phototransistor in clear, T-3/4 plastic package with lens
- Dimension is Ø 1.8mm
- High photo sensitivity and high radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity is ϕ ± 12°
- Used as detector in electronic control and drive circuits
- 1.0mA collector light current at Ee = 1mW/cm2, λ = 950nm, VCE = 5V
- Wavelength of peak sensitivity is 825nm
Technical Specifications
Wavelength Typ
825nm
Power Consumption
100mW
Transistor Case Style
T-3/4 (1.8mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
12°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414090
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000151