IRF740LCPBF
Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | IRF740LCPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 8648476 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Rs.411.060 |
| 10+ | Rs.209.470 |
| 100+ | Rs.190.360 |
| 500+ | Rs.155.970 |
| 1000+ | Rs.155.020 |
| 5000+ | Rs.151.920 |
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | IRF740LCPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Order Code | 8648476 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 400V |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.55ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 125W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | Lead (04-Feb-2026) |
Product Overview
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
- Repetitive avalanche rated
- Reduced gate drive requirement
- 30V Enhanced VGS Rating
- Reduced CISS, COSS, CRSS
- Extremely high frequency operation
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 10A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 125W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (04-Feb-2026) |
| Drain Source Voltage Vds | 400V |
|---|---|
| Drain Source On State Resistance | 0.55ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Israel Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002691 |