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SI1965DH-T1-GE3
Dual MOSFET, P Channel, 12 V, 12 V, 1.3 A, 1.3 A, 0.315 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1965DH-T1-GE3
Order Code3772742RL
Product RangeTrench Series
Your Part Number
Technical Datasheet
4,250 In Stock
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| Quantity | Price |
|---|---|
| 100+ | Rs.28.670 |
| 500+ | Rs.21.840 |
| 1000+ | Rs.16.800 |
| 5000+ | Rs.15.690 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Rs.2,867.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1965DH-T1-GE3
Order Code3772742RL
Product RangeTrench Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Drain Source Voltage Vds N Channel12V
Continuous Drain Current Id1.3A
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel1.3A
On Resistance Rds(on)0.315ohm
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.315ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.315ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max400mV
Power Dissipation Pd1.25W
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
1.3A
Continuous Drain Current Id N Channel
1.3A
Continuous Drain Current Id P Channel
1.3A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
Trench Series
Automotive Qualification Standard
-
Channel Type
P Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.315ohm
Drain Source On State Resistance N Channel
0.315ohm
Drain Source On State Resistance P Channel
0.315ohm
Transistor Case Style
SOT-363
Power Dissipation Pd
1.25W
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001