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SI2315BDS-T1-GE3.
P CHANNEL MOSFET
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5,931 In Stock
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| Quantity | Price |
|---|---|
| 1+ | Rs.90.560 |
| 10+ | Rs.56.720 |
| 100+ | Rs.37.150 |
| 500+ | Rs.28.710 |
| 1000+ | Rs.22.440 |
| 5000+ | Rs.19.720 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Rs.90.56
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3.
Order Code1867177
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation750mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
P Channel
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
12V
Transistor Case Style
SOT-23
Power Dissipation
750mW
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for SI2315BDS-T1-GE3.
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044