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SI4564DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel2056723RL
Cut Tape2056723
Your Part Number
3,439 In Stock
15,000 more incoming. You can reserve stock now
3,439 Delivery in 4-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Rs.145.460 | Rs.727.30 |
| Total Price | Rs.727.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Rs.145.460 |
| 50+ | Rs.121.720 |
| 100+ | Rs.97.970 |
| 500+ | Rs.77.730 |
| 1000+ | Rs.71.250 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3Copy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel2056723RL
Cut Tape2056723
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.0145ohm
Drain Source On State Resistance P Channel0.0145ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
The SI4564DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance P Channel
0.0145ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.0145ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000253