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| Manufacturer | WEEN SEMICONDUCTORS |
|---|---|
| Manufacturer Part No | WG25R135W1QCopy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 4697767 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Rs.308.540 |
| 10+ | Rs.200.250 |
| 100+ | Rs.174.680 |
| 500+ | Rs.149.110 |
| 1000+ | Rs.123.710 |
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Product Information
| Manufacturer | WEEN SEMICONDUCTORS |
|---|---|
| Manufacturer Part No | WG25R135W1QCopy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 4697767 |
| Technical Datasheet | |
| Continuous Collector Current | 50A |
| Collector Emitter Saturation Voltage | 1.85V |
| Power Dissipation | 300W |
| Collector Emitter Voltage Max | 1.35kV |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Transistor Mounting | Through Hole |
| Product Range | - |
| SVHC | No SVHC (21-Jan-2025) |
Product Overview
WG25R135W1Q is an IGBT. It uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode. This device is part of reverse-conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation. Typical applications include microwave ovens, induction heating, resonant converters, soft switching applications.
- Reverse conducting IGBT with monolithic body diode
- Low conduction losses, EMI improved design
- Positive temperature efficient for easy parallel operating
- Collector-emitter breakdown voltage is 1350V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2.1V typ at VGE = 0V; IF = 25A; Tj = 25°C
- Zero gate voltage collector current is 100μA max at VCE = 1350V; VGE = 0V; Tj = 25°C
- Gate charge is 98nC typ at VCC = 1080V; IC = 25A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 89nS typ at Tj=25°C, IC=25A, VGE=15V / 0V, RG=10 ohm, Cr=300nF, R=2ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Technical Specifications
| Continuous Collector Current | 50A |
|---|---|
| Power Dissipation | 300W |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Collector Emitter Saturation Voltage | 1.85V |
|---|---|
| Collector Emitter Voltage Max | 1.35kV |
| No. of Pins | 3Pins |
| Transistor Mounting | Through Hole |
| SVHC | No SVHC (21-Jan-2025) |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85411000 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | To be advised |
| RoHS Phthalates Compliant: | To be advised |
| SVHC: | No SVHC (21-Jan-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000001 |