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| Manufacturer | WEEN SEMICONDUCTORS |
|---|---|
| Manufacturer Part No | WG40N120MFW1QCopy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 4697769 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | Rs.303.410 |
| 10+ | Rs.273.080 |
| 100+ | Rs.256.900 |
| 500+ | Rs.238.680 |
| 1000+ | Rs.222.500 |
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Product Information
| Manufacturer | WEEN SEMICONDUCTORS |
|---|---|
| Manufacturer Part No | WG40N120MFW1QCopy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 4697769 |
| Technical Datasheet | |
| Continuous Collector Current | 80A |
| Collector Emitter Saturation Voltage | 1.68V |
| Power Dissipation | 750W |
| Collector Emitter Voltage Max | 1.2kV |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Transistor Mounting | Through Hole |
| Product Range | - |
| SVHC | No SVHC (21-Jan-2025) |
Product Overview
WG40N120MFW1Q is an IGBT. It uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode. This device is part of the medium speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter. Typical applications include solar inverter, UPS, welding converters, PFC and mid to high switching frequency applications.
- Medium switching speed, EMI improved design
- Positive temperature efficient for easy parallel operating
- Very soft, fast recovery anti-parallel diode
- Collector-emitter breakdown voltage is 1200V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2.3V typ at VGE = 0V; IF = 40A; Tj = 25°C
- Zero gate voltage collector current is 250μA max at VCE = 1200V; VGE = 0V; Tj = 25°C
- Gate charge is 200nC typ at VCC = 960V; IC = 40A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 254nS typ at Tj = 25°C;VCC = 600V; IC = 40A; VGE = 15V / 0V;RG = 10 ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Technical Specifications
| Continuous Collector Current | 80A |
|---|---|
| Power Dissipation | 750W |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Collector Emitter Saturation Voltage | 1.68V |
|---|---|
| Collector Emitter Voltage Max | 1.2kV |
| No. of Pins | 3Pins |
| Transistor Mounting | Through Hole |
| SVHC | No SVHC (21-Jan-2025) |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85411000 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (21-Jan-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000001 |